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Metal Oxide Semiconductor Field Effect Transistor Array for a Read Only Store

IP.com Disclosure Number: IPCOM000093183D
Original Publication Date: 1967-Jun-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Dennard, RH: AUTHOR [+2]

Abstract

The read-only store comprises a plurality of spaced parallel N+-type diffusions S and D formed in P-type semiconductive wafer W. Source diffusions S are connected to ground potential along common diffusion C. Drain diffusions D are each connected through a load resistor R to operating potential B+. A dielectric layer, not shown, is formed over diffusions S and D, the surface being preformed such that selected regions registered above surface portions of wafer W between diffusions S and D have a reduced thickness, as indicated by dashed outlines L.

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Metal Oxide Semiconductor Field Effect Transistor Array for a Read Only Store

The read-only store comprises a plurality of spaced parallel N+-type diffusions S and D formed in P-type semiconductive wafer W. Source diffusions S are connected to ground potential along common diffusion C. Drain diffusions D are each connected through a load resistor R to operating potential B+. A dielectric layer, not shown, is formed over diffusions S and D, the surface being preformed such that selected regions registered above surface portions of wafer W between diffusions S and D have a reduced thickness, as indicated by dashed outlines L.

Output leads 1...N corresponding to particular information bit slots are connected to diffusions D through via holes in the dielectric layer. A plurality of spaced parallel metallic conductors M1...MN corresponding to particular word addresses are formed transverse to diffusions S and D such as to pass over the selected surface regions of the dielectric layer having a reduced thickness.

An MOS field-effect transistor indicating the storage of a binary 1 is defined at each crossover of a conductor M and diffusions S and D where the interpositioned dielectric layer has a reduced thickness and energization of conductor M is effective to support conduction between diffusions S and D. Storage of a binary 0 is indicated at each crossover of a conductor M and diffusions S and D where the interpositioned dielectric layer L is of normal thickness and e...