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Selective Deposition With Electron Beam and Ion Source on Thin Films

IP.com Disclosure Number: IPCOM000093216D
Original Publication Date: 1967-Jul-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Goll, FM: AUTHOR [+2]

Abstract

Conductive patterns can be deposited on thin-film substrates by the method and apparatus shown. Within vacuum chamber 1, electron gun 3 is positioned on one side of the thin-film substrate 5 and an ion gun 7 is positioned on the other side of such substrate. Electron gun 3 provides a controlled deflection electron beam. The latter impinges on the surface of one side of substrate 5 in a pattern which can be controlled by appropriate deflection and focusing of the electron beam by well-known arrangements. A spray of positive ions or a focused beam of positive ions, supplied from the ion gun 7, impinges on the side of substrate 5 opposite that of the electron beam.

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Selective Deposition With Electron Beam and Ion Source on Thin Films

Conductive patterns can be deposited on thin-film substrates by the method and apparatus shown. Within vacuum chamber 1, electron gun 3 is positioned on one side of the thin-film substrate 5 and an ion gun 7 is positioned on the other side of such substrate. Electron gun 3 provides a controlled deflection electron beam. The latter impinges on the surface of one side of substrate 5 in a pattern which can be controlled by appropriate deflection and focusing of the electron beam by well-known arrangements. A spray of positive ions or a focused beam of positive ions, supplied from the ion gun 7, impinges on the side of substrate 5 opposite that of the electron beam. The positive ions are attracted and deposited as a result of the high negative charge concentration penetrating substrate 5 along the path and the width of the directed electron beam on the other surface of such substrate. This arrangement provides a direct deposition of a conductor, a semiconductor or other layer, with selective sizes and locations of deposition on a thin-film substrate using an electron gun and an ion gun isolated by the thin-film substrate between the two.

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