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Browse Prior Art Database

Metal Contacts to Semiconductor Devices

IP.com Disclosure Number: IPCOM000093238D
Original Publication Date: 1967-Jul-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Sopher, RP: AUTHOR [+2]

Abstract

In the fabrication of semiconductor devices, there can result excessive alloying of the aluminum conductor stripes into the active areas of the devices. This can occur during the deposition of the metal contacts or during heat treatment in subsequent processing of the semiconductor device. The excessive alloying can be eliminated by using the structure of drawings A or B. Between 200-1200 Angstrom units of aluminum 1 are deposited to make ohmic contact with active areas 2 in silicon device 3. Thermally grown silicon dioxide layer 4 covers all areas of device 3 except the contact openings. Layer 5 of between 2000 and 10,000 Angstrom units of molybdenum or chromium is then deposited over the aluminum layer 1.

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Metal Contacts to Semiconductor Devices

In the fabrication of semiconductor devices, there can result excessive alloying of the aluminum conductor stripes into the active areas of the devices. This can occur during the deposition of the metal contacts or during heat treatment in subsequent processing of the semiconductor device. The excessive alloying can be eliminated by using the structure of drawings A or B. Between 200-1200 Angstrom units of aluminum 1 are deposited to make ohmic contact with active areas 2 in silicon device 3. Thermally grown silicon dioxide layer 4 covers all areas of device 3 except the contact openings. Layer 5 of between 2000 and 10,000 Angstrom units of molybdenum or chromium is then deposited over the aluminum layer 1. Bulk conductive layer 6 of between 5000 and 10,000 Angstroms of a highly conductive material such as aluminum, molybdenum, silver or gold is applied over layer 5. The purpose of layer 5 is to serve as a barrier to prevent the penetration of bulk conductor 6 into device 3. In drawing B the molybdenum layer is used as both the barrier and the bulk conductivity layer. All metal depositions can be effected in one evaporation series. The molybdenum and chromium layers 5 and 6 serve as a barrier because of the low solubility of aluminum, silver and gold in molybdenum and chromium at the processing temperatures.

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