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Passivation of Silicon Dioxide With Thin Aluminum Oxide Layer

IP.com Disclosure Number: IPCOM000093239D
Original Publication Date: 1967-Jul-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Burkhardt, PJ: AUTHOR

Abstract

A very thin layer of aluminum oxide over a silicon dioxide film covering a semiconductor device reduces the mobile charge density and the resultant deterioration of the electrode contact overlayer. In this electrical contact structure, semiconductor device 1 is electrically contacted by contact electrode layer 2 which is composed of, for example, aluminum. Device 1 is passivated from layer 2 in all areas, except the contact itself, by silicon dioxide film 3 and aluminum oxide coating 4 over film 3. The presence of coating 4 prevents a reaction between layer 2 and film 3. Coating 4 can be applied to the silicon dioxide by various techniques. One technique is the vacuum deposition of a layer of, for example, 30 Angstroms units of aluminum onto film 3.

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Passivation of Silicon Dioxide With Thin Aluminum Oxide Layer

A very thin layer of aluminum oxide over a silicon dioxide film covering a semiconductor device reduces the mobile charge density and the resultant deterioration of the electrode contact overlayer. In this electrical contact structure, semiconductor device 1 is electrically contacted by contact electrode layer 2 which is composed of, for example, aluminum. Device 1 is passivated from layer 2 in all areas, except the contact itself, by silicon dioxide film 3 and aluminum oxide coating 4 over film 3. The presence of coating 4 prevents a reaction between layer 2 and film 3. Coating 4 can be applied to the silicon dioxide by various techniques. One technique is the vacuum deposition of a layer of, for example, 30 Angstroms units of aluminum onto film 3. The aluminum layer is then oxidized by raising the temperature of the structure to above 1000 degrees C in an oxygen or steam ambient. Aluminum contact electrode 2 can then be deposited by conventional vacuum deposition over it.

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