Browse Prior Art Database

Epitaxial Transistor with Exposed Base Contact

IP.com Disclosure Number: IPCOM000093243D
Original Publication Date: 1967-Jul-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Boss, DW: AUTHOR [+3]

Abstract

Device base regions can be protected from inversion by a silicon dioxide dielectric coating covering the transistor. This is effected by introducing a heavily doped base contact region to prevent emitter collector bridging along the oxide-silicon interface. Drawing A shows a monocrystalline N+ type silicon substrate 1 having deposited epitaxially over it, in turn, a P-type layer 2 and an N-type layer 3 of monocrystalline silicon. Over layer 2 is deposited a pyrolytic layer 4 of silicon dioxide by conventional techniques. Drawing B shows the structure resulting from the conventional masking and etching of the layers. Heavily doped base contact region 5 is grown on the edge of the mesa, as shown in drawing C, by the use of silicon tetrachloride vapor growth.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Epitaxial Transistor with Exposed Base Contact

Device base regions can be protected from inversion by a silicon dioxide dielectric coating covering the transistor. This is effected by introducing a heavily doped base contact region to prevent emitter collector bridging along the oxide-silicon interface.

Drawing A shows a monocrystalline N+ type silicon substrate 1 having deposited epitaxially over it, in turn, a P-type layer 2 and an N-type layer 3 of monocrystalline silicon. Over layer 2 is deposited a pyrolytic layer 4 of silicon dioxide by conventional techniques. Drawing B shows the structure resulting from the conventional masking and etching of the layers. Heavily doped base contact region 5 is grown on the edge of the mesa, as shown in drawing C, by the use of silicon tetrachloride vapor growth. The use of silicon tetrachloride vapor growth allows the growth of monocrystalline silicon only on the silicon portions of the substrate. No silicon is grown on the silicon dioxide portions of the substrate. Drawing D shows the completed active device having silicon dioxide layer 6 grown over the otherwise exposed portion of substrate 1 and also shows openings 7 and 8 to the emitter and base contacts, respectively.

1

Page 2 of 2

2

[This page contains 3 pictures or other non-text objects]