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Punctured Bit Lines

IP.com Disclosure Number: IPCOM000093313D
Original Publication Date: 1967-Aug-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Daughton, JM: AUTHOR [+2]

Abstract

This technique reduces the detrimental effects of eddy currents along the bit conductor in a thin-film magnetic storage device. Shown in broken section is bit line 2 with word line 4 superimposed orthogonally. The storage area is that area along the bit conductor directly beneath the word line. At the extremities of the storage area, holes 6 are formed. Thus, an appreciable fraction of the flux set up by the hard-direction field now passes through the holes and hard-direction eddy current field is minimized. The time constant of the remaining field is also reduced. The advantages of this method over slotting the bit line are higher line conductance and, in the case of a coupled easy axis film device, better device performance.

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Punctured Bit Lines

This technique reduces the detrimental effects of eddy currents along the bit conductor in a thin-film magnetic storage device. Shown in broken section is bit line 2 with word line 4 superimposed orthogonally. The storage area is that area along the bit conductor directly beneath the word line. At the extremities of the storage area, holes 6 are formed. Thus, an appreciable fraction of the flux set up by the hard-direction field now passes through the holes and hard-direction eddy current field is minimized. The time constant of the remaining field is also reduced. The advantages of this method over slotting the bit line are higher line conductance and, in the case of a coupled easy axis film device, better device performance.

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