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Control of Domain Wall Creep in Bit Strip Magnetic Memory

IP.com Disclosure Number: IPCOM000093314D
Original Publication Date: 1967-Aug-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 69K

Publishing Venue

IBM

Related People

Vinal, AW: AUTHOR

Abstract

A bit strip memory device comprises bit conductor film 10 sandwiched between lower and upper magnetic films 1 1 and 12. The films are formed on nonconductive substrate 13 having conductor film 14 on the bottom surface of substrate 13 for purposes of lowering the impedance of the bit-sense transmission line. Both magnetic films, which are preferably nickel-iron, have an induced magnetic aniosotropy. The easy axis of each film layer is perpendicular to the edges of magnetic films 11 and 12. The respective magnetic axes are antiparallel with respect to each other. Thus, magnetic flux is coupled circumferentially about bit conductor film 10.

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Control of Domain Wall Creep in Bit Strip Magnetic Memory

A bit strip memory device comprises bit conductor film 10 sandwiched between lower and upper magnetic films 1 1 and 12. The films are formed on nonconductive substrate 13 having conductor film 14 on the bottom surface of substrate 13 for purposes of lowering the impedance of the bit-sense transmission line. Both magnetic films, which are preferably nickel-iron, have an induced magnetic aniosotropy. The easy axis of each film layer is perpendicular to the edges of magnetic films 11 and 12. The respective magnetic axes are antiparallel with respect to each other. Thus, magnetic flux is coupled circumferentially about bit conductor film 10.

Binary information bit storage areas are formed along the longitudinal length of the strip at intervals established by the spacing of the insulated orthogonal word conductors 15. Word conductor strips 15 are insulated from the bit strips and a conductive film backing sheet 20 by nonconductive film layers 21 and 22 respectively. The storage area for each magnetic bit is substantially rectangular and is defined by the dimensions of word conductors 15. When data is stored in bit strip memory films 11 and 12, domain walls are formed between the storage areas. Under repeated switching, the domain walls tend to creep longitudinally along the magnetic strip causing poor registration between word conductor 15 and the storage area.

The domain wall creep is controlled by introducing...