Browse Prior Art Database

Point Tunneling Through a Schottky Barrier

IP.com Disclosure Number: IPCOM000093338D
Original Publication Date: 1967-Aug-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

von Molnar, S: AUTHOR

Abstract

This technique for point tunneling spectroscopy in superconductors eliminates the need for thin-film junctions in tunneling spectroscopy where only one superconductor is involved.

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Point Tunneling Through a Schottky Barrier

This technique for point tunneling spectroscopy in superconductors eliminates the need for thin-film junctions in tunneling spectroscopy where only one superconductor is involved.

Schottky theoretically predicted that a metal in contact with a semiconductor produces a surface barrier. This feature is utilized by taking a single crystal of zinc doped gallium arsenide having 2 x 10/19/ carriers/cc. and fashioning it into a pointed tip 2 about 0.01'' in diameter. Metal 4, a superconductor, is fastened onto a suitable insulated support 6. Tip 2 is pressed, as indicated by the dotted line, into the metal surface. Current and voltage readings are obtained at different temperatures near absolute zero, i.e., about 1.34 degrees K to about 4.2 degrees K.

Since it is the insulating layer between semiconductor 2 and metal 4 that provides the barrier layer through which tunneling takes place, prior attempts have been made to realize such insulating layer by making the oxide of a metal, but it has been difficult to accurately control such thickness. In this device, the insulating thickness is effectively controlled by controlling the doping level of the GaAs. The probe can be used with Al, Ta, Sn and Pb.

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