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Solution Growth of Large Crystals of GaP

IP.com Disclosure Number: IPCOM000093339D
Original Publication Date: 1967-Aug-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 48K

Publishing Venue

IBM

Related People

Blum, SE: AUTHOR [+3]

Abstract

A radiofrequency heated liquid zone of Ga-GaP solution is passed upward through a polycrystalline ingot of GaP from a GaP seed. The GaP seed is twinned with all twin planes parallel to <211> growth axis. The twinned structure provides re-entrant easy nucleation of crystal growth. By maintaining a flat solid-liquid interface, the crystal structure of the GaP seed is propagated. In the same instance, large parts of the grown crystal are single crystal. This interface shape is obtained by adjusting the temperature of the top and bottom auxiliary furnaces. Zone travel is obtained by passing the crucible, which is sealed under vacuum in a quartz ampule, not shown, through the RF coil. The coil and auxiliary furnaces are stationary.

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Solution Growth of Large Crystals of GaP

A radiofrequency heated liquid zone of Ga-GaP solution is passed upward through a polycrystalline ingot of GaP from a GaP seed. The GaP seed is twinned with all twin planes parallel to <211> growth axis. The twinned structure provides re-entrant easy nucleation of crystal growth. By maintaining a flat solid-liquid interface, the crystal structure of the GaP seed is propagated. In the same instance, large parts of the grown crystal are single crystal. This interface shape is obtained by adjusting the temperature of the top and bottom auxiliary furnaces. Zone travel is obtained by passing the crucible, which is sealed under vacuum in a quartz ampule, not shown, through the RF coil. The coil and auxiliary furnaces are stationary. Recrystallization of GaP by passing a dilute Ga-GaP solution through a granular composite of Ga-GaP is mentioned by J. D. Broder et al in J. of Electrochem. Soc., 110, 1150, 1963.

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