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Nitrogen Reactions on Silicon Wafers

IP.com Disclosure Number: IPCOM000093340D
Original Publication Date: 1967-Aug-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 20K

Publishing Venue

IBM

Related People

Spielmann, WK: AUTHOR [+2]

Abstract

Nitrogen reactions on silicon wafers serve as insulator films and substrates to which monocrystalline silicon is epitaxially applied. An insulator film of Si(3)N(4) is formed on a silicon wafer in a reactor, using nitrogen and appropriate temperatures. Monocrystalline silicon layers are epitaxially formed in certain areas of the insulator film. In these silicon layers integrated circuits can be produced.

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Nitrogen Reactions on Silicon Wafers

Nitrogen reactions on silicon wafers serve as insulator films and substrates to which monocrystalline silicon is epitaxially applied. An insulator film of Si(3)N(4) is formed on a silicon wafer in a reactor, using nitrogen and appropriate temperatures. Monocrystalline silicon layers are epitaxially formed in certain areas of the insulator film. In these silicon layers integrated circuits can be produced.

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