Browse Prior Art Database

Electroluminescent and Radiation Detector Junctions

IP.com Disclosure Number: IPCOM000093401D
Original Publication Date: 1967-Sep-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 62K

Publishing Venue

IBM

Related People

Marinace, JC: AUTHOR

Abstract

The technique is for the fabrication of an efficient electroluminescent diode. In the latter, the PN junction is defined by diffusion of the dopant along the interface between a diffusion mask and the semiconductor water.

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Electroluminescent and Radiation Detector Junctions

The technique is for the fabrication of an efficient electroluminescent diode. In the latter, the PN junction is defined by diffusion of the dopant along the interface between a diffusion mask and the semiconductor water.

In A, N-type region 1, e.g., of GaAs, is epitaxially grown in semi-insulating wafer 3, e.g., of GaAs, surfaces 5 and 5' being lapped and polished. In B, masking patch 7, e.g., of SiO(2), is placed over and extends slightly beyond region 1. Surface 5 is exposed to a gaseous dopant, e.g., zinc, which is masked by patch 7 and diffuses into wafer 3 to define deep contact diffusions 9. Also, diffusion of the dopant occurs along interface 11 between patch 7 and region 1 so as to convert the surface portion of region 1 to P-type conductivity and define PN junction 13.

In C, patch 7 is removed and metal contacts 15 and 15' are provided on surfaces 5 and 51, respectively, openings 17 and 17' being provided allowing for the egress of light. Junction 13 is sufficiently shallow to optimize light passing from surface 5. Also, portions of region 1 are etched to optimize the quantity of light passing from surface 5'. Also, region 1 can be epitaxially grown in any desired pattern, for example, to form alphanumeric symbols.

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