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Deposition of Thin Films of Cobalt Phosphorus by Sputtering

IP.com Disclosure Number: IPCOM000093410D
Original Publication Date: 1967-Sep-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Judy, JH: AUTHOR [+2]

Abstract

Thin films of high coercivity cobalt-phosphorus are deposited by DC sputtering.

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Deposition of Thin Films of Cobalt Phosphorus by Sputtering

Thin films of high coercivity cobalt-phosphorus are deposited by DC sputtering.

Electroless or electroplated cobalt-phosphorus is placed on a substrate, such as polished brass, to form the sputtering cathode. Sputtering is performed in an inert atmosphere, such as argon, at a pressure of 10 to 100 microns of Hg. Useful sputtering voltages range from 1,000 to 5,000 volts, with deposition rates of 100 angstroms to 1,000 angstroms per minute. Resulting films are coated onto substrates such as glass, quartz, brass, alumina or plastic with excellent adhesion. Such films have a uniform phosphorus content and distribution and exhibit coercivity on the order of 500 oersteds.

This technique is applicable to the deposition of films of iron phosphorus, nickel-phosphorus, cobalt-iron-phosphorus, cobalt-nickel-phosphorus, iron- nickel-phosphorus, and other alloy sources prepared by plating.

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