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Low Surface Charge Density Silicon with a Silicon Nitride Coating

IP.com Disclosure Number: IPCOM000093435D
Original Publication Date: 1967-Sep-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Doo, VY: AUTHOR [+3]

Abstract

The surface charge density of pyrolytically deposited silicon nitride upon a silicon substrate is influenced by the carrier gas used in the deposition. Hydrogen is generally used as the carrier gas in the pyrolytic deposition of silicon nitride film in the silane Si H(4) - ammonia NH(3) system, so that the premature deposition of silane can be suppressed by the presence of the excess hydrogen. Silicon nitrate films are deposited by this method on N-type silicon substrates using helium, rather than hydrogen, as the carrier gas. both bare and silicon dioxide coated N-type silicon substrates are deposited upon. The measured flat band surface charge density is 1.1 to 1.9 x 10/12/ cm/-2/ on the bare silicon substrate and 4 to 6 x 10/11/ cm/-2/ on the silicon dioxide coated silicon substrate.

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Low Surface Charge Density Silicon with a Silicon Nitride Coating

The surface charge density of pyrolytically deposited silicon nitride upon a silicon substrate is influenced by the carrier gas used in the deposition. Hydrogen is generally used as the carrier gas in the pyrolytic deposition of silicon nitride film in the silane Si H(4) - ammonia NH(3) system, so that the premature deposition of silane can be suppressed by the presence of the excess hydrogen. Silicon nitrate films are deposited by this method on N-type silicon substrates using helium, rather than hydrogen, as the carrier gas. both bare and silicon dioxide coated N-type silicon substrates are deposited upon. The measured flat band surface charge density is 1.1 to 1.9 x 10/12/ cm/-2/ on the bare silicon substrate and 4 to 6 x 10/11/ cm/-2/ on the silicon dioxide coated silicon substrate. These values of charge density are substantially lower than like samples which have pyrolytic silicon nitride film deposited using a hydrogen carrier gas.

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