Browse Prior Art Database

Aluminum Conductive Stripe for High Current Application

IP.com Disclosure Number: IPCOM000093438D
Original Publication Date: 1967-Sep-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Sopher, RP: AUTHOR

Abstract

These stripe structures increase device terminal lifetime by reducing the effect of electromigration of aluminum in the stripes at critical locations.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 99% of the total text.

Page 1 of 2

Aluminum Conductive Stripe for High Current Application

These stripe structures increase device terminal lifetime by reducing the effect of electromigration of aluminum in the stripes at critical locations.

There is mass transport of aluminum during electrical stress of thin films. The extent of metal transport under electrical stress and time is sufficient to rupture the stripe at the negative terminal of the circuit and is believed to be the result of a condensation of vacancies. In these structures, the thickness of the stripe is increased at the critical point under highest stress.

In the structure in A, a large volume of aluminum in the form of layer 10 is deposited on stripe 12 directly beneath laminated contact pad 14, consisting of chromium, copper, and gold layers, respectively. A head-tin solder mass 16 is located over pad 14. Stripe 12 is insulated from semiconductor body 18 by a layer of SiO(2) which underlies glass layer 22.

In the structure in B, a large volume of aluminum is provided by layer 30 in contact with stripe 12 and underlying laminated pad 14. The remaining structure of the terminal is similar in arrangement to the structure in A.

Aluminum layers 10 and 30 can be conveniently applied by evaporation through a mask or subtractively etched as required. The basic arrangements can be modified for use in via-holes for multilevel device structures where current crowding is a significant factor.

1

Page 2 of 2

2

[This page contains 2 pictures or o...