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Conductive Stripe Geometry for Transistors

IP.com Disclosure Number: IPCOM000093439D
Original Publication Date: 1967-Sep-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 46K

Publishing Venue

IBM

Related People

Lehman, HS: AUTHOR

Abstract

This conductive stripe geometry eliminates stripe failure due to metal electromigration. In microminiaturized transistor elements, heavy current densities, particularly at the emitter contact, under certain conditions cause failure of the devices. Breaks can occur in the stripe by the transporting of metal by electromigration.

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Conductive Stripe Geometry for Transistors

This conductive stripe geometry eliminates stripe failure due to metal electromigration. In microminiaturized transistor elements, heavy current densities, particularly at the emitter contact, under certain conditions cause failure of the devices. Breaks can occur in the stripe by the transporting of metal by electromigration.

A stripe geometry for transistor 10, drawing A, eliminates failures due to electromigration of metal. Transistor 10 has collector 12, base 14, and emitter
16. As shown at B, base stripe 18 makes contact with base diffusion 20 through holes 21 in oxide layer 22. Emitter 16 is located directly over emitter diffusion 24 and makes contact through hole 25 in insulator layers 22 and 26. The structure of emitter 16 consists of aluminum layer 28, laminated layer structure 30, ball 32, and solder 34 bonding ball 32 to layer 30. Preferably, layer 26 is sputtered glass.

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