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Transistor Structure

IP.com Disclosure Number: IPCOM000093441D
Original Publication Date: 1967-Sep-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Collins, TW: AUTHOR

Abstract

When transistor structures are reduced to minimum size, as in large-scale integrated circuits, there is a tendency for the metallized contacts to develop open circuits due to the high current densities. This is particularly true of the emitter contact stripe.

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Transistor Structure

When transistor structures are reduced to minimum size, as in large-scale integrated circuits, there is a tendency for the metallized contacts to develop open circuits due to the high current densities. This is particularly true of the emitter contact stripe.

In this transistor, a pair of metalized collector contacts 1 and 2 provide ohmic contact to collector region 3. Base region 4 has a pair of metallized contacts 5 and 6. Connection to emitter region 7 is made through contact 8.

The shape of contact 8 is such that uniform current density from the center to the edge of the emitter results no matter which side the connection is taken from. The bow tie shape prevents the current density from exceeding the maximum acceptable value and provides a saving in the area required. If the emitter contact stripe were of uniform width, more area is required for a transistor with any current density advantage over the bow tie shape.

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