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Mounting Electroluminescent Diodes

IP.com Disclosure Number: IPCOM000093446D
Original Publication Date: 1967-Sep-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Garrison, V: AUTHOR

Abstract

The electroluminescent diode is formed in a body of gallium arsenide. Both the P and N regions of the diode are doped with silicon which is amphoteric in gallium arsenide. The original substrate from which the diodes are cleaved is 0.5 mm thick and is doped with silicon to be N-type. The P region and junction in the diode are formed by a solution regrowth process during which silicon is entered as a P-type impurity. The substrate is then cleaved into individual diodes which are about 200 by 200 mm in cross-section and about .020 inches in length. Each individual diode is then alloyed to a nickel tab 12 using an AuSn alloy to make ohmic connection to the N region. The junction 10 and the P region extend out from the nickel tab.

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Mounting Electroluminescent Diodes

The electroluminescent diode is formed in a body of gallium arsenide. Both the P and N regions of the diode are doped with silicon which is amphoteric in gallium arsenide. The original substrate from which the diodes are cleaved is 0.5 mm thick and is doped with silicon to be N-type. The P region and junction in the diode are formed by a solution regrowth process during which silicon is entered as a P-type impurity. The substrate is then cleaved into individual diodes which are about 200 by 200 mm in cross-section and about .020 inches in length. Each individual diode is then alloyed to a nickel tab 12 using an AuSn alloy to make ohmic connection to the N region. The junction 10 and the P region extend out from the nickel tab. Ohmic connection is made to the P region by alloying to this region copper wire 14 which is coated with indium.

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