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High Tolerance Dielectric for Integrated Memory Structures

IP.com Disclosure Number: IPCOM000093462D
Original Publication Date: 1967-Oct-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Silcox, NW: AUTHOR

Abstract

Puckering, swelling, and unevenness in photoresist insulation used in the fabrication of coupled film devices is prevented. This is effected by using an isopropyl alcohol rinse after development in place of warm water rinse conventionally employed. The use of photoresist insulation so treated results in thin-film memories having superior crossover capacitance between adjacent bits, increased breakdown voltage, and improved recovery from high temperature and humidity conditions. To realize the desired results, the isopropyl alcohol is used for gradual dilution of the developer solution, principally xylene.

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High Tolerance Dielectric for Integrated Memory Structures

Puckering, swelling, and unevenness in photoresist insulation used in the fabrication of coupled film devices is prevented. This is effected by using an isopropyl alcohol rinse after development in place of warm water rinse conventionally employed. The use of photoresist insulation so treated results in thin-film memories having superior crossover capacitance between adjacent bits, increased breakdown voltage, and improved recovery from high temperature and humidity conditions. To realize the desired results, the isopropyl alcohol is used for gradual dilution of the developer solution, principally xylene.

In an example, thin-film resist KTFR is developed using an isopropyl alcohol solvent system according to the following time sequence: Time Liquid

2.5 minutes KMER developer,

15 seconds xylene,

15 seconds 3 parts by weight xylene, 1 part by

weight isopropyl alcohol.

15 seconds 2 parts by weight xylene, 2 parts by

weight isopropyl alcohol,

15 seconds 1 part by weight xylene, 3 parts by

weight isopropyl alcohol, and

15 seconds isopropyl alcohol.

With the developing solution, the crossover capacitance between adjacent bits is held to +/- 1%. The crossover capacitance over a 4 in 2 plate is held to +/- 10%. The breakdown voltages increased from 435 to 818 kv. per cm. The recovery from 80 degrees C and 80% relative humidity conditions is increased from 76 to 89%.

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