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Multilayer Photoresist System

IP.com Disclosure Number: IPCOM000093467D
Original Publication Date: 1967-Oct-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Htoo, MS: AUTHOR

Abstract

A photoresist system for photoetching processes is provided in which a layer of KPR*-2 photoresist is coated over a layer of KOR photoresist also a product of Eastman Kodak Co.

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Multilayer Photoresist System

A photoresist system for photoetching processes is provided in which a layer of KPR*-2 photoresist is coated over a layer of KOR photoresist also a product of Eastman Kodak Co.

Photoresist compositions are cross-linkable, film-forming polymer compositions containing light-sensitive compounds. Upon exposure to actinic light, these compositions harden and become resistant to chemical etchants. In photoetching processes, such as in the formation of printed circuits or in the removal of SiO(2) coatings in semiconductor wafer diffusions, photoresist coatings are used to protect the areas which are not to be etched away. Protective photoresist patterns are formed by exposing the photoresist to ultraviolet light through suitable masks.

The KOR photoresist is capable of high exposure speeds which are desirable for rapid processing. However, because the composition is sensitive to yellow light, all processing must take place in red light. For large-scale, continuous operations, the use of a red light ambient is less than desirable because of its effect on the efficiency and fatigue of the operators.

On the other hand, the KPR-2 composition which can be used in yellow light is capable only of much slower exposure speeds.

However, a system in which a layer of KPR-2 photoresist is coated over a layer of KOR photoresist yields a combination which is uneffected by and can be used in yellow light. In addition, the combined layers are capable of exp...