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A High Frequency (1-10 GHz) Modulated Light Source

IP.com Disclosure Number: IPCOM000093497D
Original Publication Date: 1967-Oct-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Lanza, C: AUTHOR

Abstract

Modulated light source 1 consists of gallium arsenide body 3 comprising N-type region 5, approx. 10/15/ impurities/cc, separated from a P-type region 7 by an intermediate N-type region 9, approx. 10/17/ impurities/cc. Region 5 defines an ohmic contact to region 5 which is operative as a Gunn-effect oscillator and, also, defines light-emitting PN junction 11 with region 7. Voltage source 13 is connected across body 3 at region 7 and annular metallic electrode 15. When light source 1 is forward biased, light is generated at junction 11 and, concurrently, domains 17 are nucleated and propagated cyclically along region 5. While a domain 17 is present, light directed through region 5 is diminished by absorption due to the Franz-Keldysh effect. While a domain 17 is absent, light directed through region 5 is not attenuated.

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A High Frequency (1-10 GHz) Modulated Light Source

Modulated light source 1 consists of gallium arsenide body 3 comprising N- type region 5, approx. 10/15/ impurities/cc, separated from a P-type region 7 by an intermediate N-type region 9, approx. 10/17/ impurities/cc. Region 5 defines an ohmic contact to region 5 which is operative as a Gunn-effect oscillator and, also, defines light-emitting PN junction 11 with region 7. Voltage source 13 is connected across body 3 at region 7 and annular metallic electrode 15. When light source 1 is forward biased, light is generated at junction 11 and, concurrently, domains 17 are nucleated and propagated cyclically along region 5. While a domain 17 is present, light directed through region 5 is diminished by absorption due to the Franz-Keldysh effect. While a domain 17 is absent, light directed through region 5 is not attenuated. Thus, light emitted

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