Browse Prior Art Database

CEA NDRO Device

IP.com Disclosure Number: IPCOM000093516D
Original Publication Date: 1967-Oct-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Logue, NC: AUTHOR

Abstract

A hard, high anisotropy film, soft, low anisotropy, film nondestructive readout NDRO device is provided by employing the closed axis CEA structure. This configuration produces higher signal levels and improved writing operation. The device has ground plane 2, soft film 3 which is used for reading, bit-sense line 4, hard film 5 which is used for storage and operates to bias the soft film 3 back to its original position after reading, word line 6, and keeper 7.

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CEA NDRO Device

A hard, high anisotropy film, soft, low anisotropy, film nondestructive readout NDRO device is provided by employing the closed axis CEA structure. This configuration produces higher signal levels and improved writing operation. The device has ground plane 2, soft film 3 which is used for reading, bit-sense line 4, hard film 5 which is used for storage and operates to bias the soft film 3 back to its original position after reading, word line 6, and keeper 7.

Soft film 3 has a thickness of 800 angstroms, a skew of 2 degrees, and a anisotropy of 3 oe. Hard film 5 has a thickness of 800 angstroms, a skew of 2 degrees, and an anisotropy of 9 oe. In a CEA structure with a separation between films of 3 microns, there is a magnetostatic interaction field strength of
2.25 oe.

The advantages of this device are that any switching which the hard film does during the read operation adds to the total signal, and that field from the bit line is in the correct direction for both film layers during the writing operations. The properties of the device enable it to operate in an intrinsic NDRO mode, i.e., with the same level read and write fields.

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