Browse Prior Art Database

Selective Area Gold Doping in Integrated Circuits

IP.com Disclosure Number: IPCOM000093538D
Original Publication Date: 1967-Oct-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Barson, F: AUTHOR

Abstract

This process provides minority carriers of short lifetime in selected portions of a monolithic device. Isolated pockets 20 can be established in a silicon crystal in accordance with the IBM Technical Disclosure Bulletin, Volume 8, No. 5, October 1965, page 798. The isolating material 22 can be silicon dioxide or silicon nitride or any other material which acts as a barrier to gold as a diffusant. Gold can be diffused into selected isolated pockets by conventional photolithographic diffusion techniques. Those pockets receiving gold doping have a reduced minority carrier lifetime relative to those pockets which are undoped with gold.

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Selective Area Gold Doping in Integrated Circuits

This process provides minority carriers of short lifetime in selected portions of a monolithic device. Isolated pockets 20 can be established in a silicon crystal in accordance with the IBM Technical Disclosure Bulletin, Volume 8, No. 5, October 1965, page 798. The isolating material 22 can be silicon dioxide or silicon nitride or any other material which acts as a barrier to gold as a diffusant. Gold can be diffused into selected isolated pockets by conventional photolithographic diffusion techniques. Those pockets receiving gold doping have a reduced minority carrier lifetime relative to those pockets which are undoped with gold.

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