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Forming Via Holes in Dielectric Films

IP.com Disclosure Number: IPCOM000093640D
Original Publication Date: 1967-Nov-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 57K

Publishing Venue

IBM

Related People

Maddocks, FS: AUTHOR [+2]

Abstract

After a first conductor 10 of a conductive pattern is formed by deposition and etching on dielectric layer 11, superimposed on a semiconductive wafer 12, via holes are formed. ..LAYOUT 2 Step 1. Thin barrier layer 13 is deposited over the underlying conductor 10. Layer 13 is a metal which is preferentially etched over conductor 10. Metal plug layer 14 is applied over layer 13 to the desired thickness, preferably 1.5 times the thickness of the dielectric layer to be penetrated. Layer 13 need not be used if layer 14 is a metal which is preferentially etched over conductor 10. Step 2. Apply chemical resist 15 to layer 14 so that such layer is protected at via hole sites. Step 3. Etch away layer 14 to form plug 16. Step 4.

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Forming Via Holes in Dielectric Films

After a first conductor 10 of a conductive pattern is formed by deposition and etching on dielectric layer 11, superimposed on a semiconductive wafer 12, via holes are formed. ..LAYOUT 2 Step 1. Thin barrier layer 13 is deposited over the underlying conductor 10. Layer 13 is a metal which is

preferentially etched over conductor 10. Metal plug

layer 14 is applied over layer 13 to the desired

thickness, preferably 1.5 times the thickness of the

dielectric layer to be penetrated. Layer 13 need not be

used if layer 14 is a metal which is preferentially

etched over conductor 10.

Step 2. Apply chemical resist 15 to layer 14 so that such layer is protected at via hole sites.

Step 3. Etch away layer 14 to form plug 16.

Step 4. Etch away layer 13, if any, leaving resist-coated plug 16 superimposed on a portion of layer 13 deposited on

conductor 10.

Step 5. Deposit dielectric layer 17 over entire surface to the desired thickness preferably leaving plug 16 extending

above layer 17.

Step 6. Remove dielectric cap 18 from plug 16. If resist 15 is retained, dielectric cap 18 can be removed by heating the

substrate to cause the resist to decompose. If the

resist is previously removed, cap 18 can be removed by

abrasion or by etching out plug 16, if such plug is to

be removed. ..LAYOUT 1

Conductor 10 is etched from a 5000 angstroms aluminum layer, barrier 11 is 1000 angstroms chromium, and the plug layer 14 is 24000 angstroms of aluminum. The...