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Vapor Growth of Gallium Phosphide

IP.com Disclosure Number: IPCOM000093641D
Original Publication Date: 1967-Nov-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Feigel, FR: AUTHOR [+2]

Abstract

Single-crystal gallium phosphide is epitaxially grown in a closed system by vapor transport using tellurium, sulfur, selenium or oxygen as the transporting agent. The transporting agent can be used in either its elemental form or as a compound such as, for example, gallium telluride or indium sulfide. Crystals are grown in a closed system to a thickness of 0.6 mm on seeds up to 8 mm in diameter. The source-to-seed distance is varied from 3 mm to 30 mm. The temperature is varied between 700 degrees C and 1150 degrees C. The temperature gradient is varied between 1 degree C per cm and 30 degrees C per cm. Better crystals are obtained at the lower temperatures with the lower temperature gradients.

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Vapor Growth of Gallium Phosphide

Single-crystal gallium phosphide is epitaxially grown in a closed system by vapor transport using tellurium, sulfur, selenium or oxygen as the transporting agent. The transporting agent can be used in either its elemental form or as a compound such as, for example, gallium telluride or indium sulfide. Crystals are grown in a closed system to a thickness of 0.6 mm on seeds up to 8 mm in diameter. The source-to-seed distance is varied from 3 mm to 30 mm. The temperature is varied between 700 degrees C and 1150 degrees C. The temperature gradient is varied between 1 degree C per cm and 30 degrees C per cm. Better crystals are obtained at the lower temperatures with the lower temperature gradients.

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