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Masking Technique for Cathodic Sputter Etching

IP.com Disclosure Number: IPCOM000093658D
Original Publication Date: 1966-Jan-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 40K

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Davidse, PD: AUTHOR


This cathodic etching technique reduces the replacement of masks employed in this technique.

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Masking Technique for Cathodic Sputter Etching

This cathodic etching technique reduces the replacement of masks employed in this technique.

In cathodic etching by sputter techniques, anode 18 and cathode or substrate holder 16 are enclosed in bell jar 20 under reduced pressure of an inert gas. Substrate 12 of silicon or other material is supported by cathode 16 in spaced relation to anode 18. Mask 10 having a suitable pattern is mounted in overlying relation to substrate 12 to be etched. When a suitably high voltage V2 is impressed across anode 18 and cathode 16, the exposed portions of substrate 12 are eroded by bombardment of positively charged ions. In conventional cathodic etching, the mask is also subjected to erosion by ionic bombardment and it must be replaced frequently.

The sputter erosion of the mask can be greatly reduced by applying a relatively low negative potential V1 to the mask. Mask 10 is insulated from substrate 12 by a suitable insulator element 14. A relatively high negative potential V2 is applied across 16 and anode 18 in conventional manner. The voltage differential between mask 10 and cathode 16 can be on the order of 1000 to 2000 volts. The resultant glow discharge maintained by mask 10 materially reduces erosion of the mask while permitting etching of substrate 12 through the apertures in mask 10.


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