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Selective Deposition of Insulating Film in Magnetic Thin Film Storage Devices

IP.com Disclosure Number: IPCOM000093704D
Original Publication Date: 1966-Jan-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Boudreaux, LJ: AUTHOR [+2]

Abstract

The process selectively deposits insulating films in magnetic thin-film storage devices, which are required in order to separate conductive layers. But, in depositing such a film on the metallic ground plane which serves as the return path for the drive lines, as well as the physical support for the film, difficulties are encountered. Such are in maintaining the edges of the ground plane free from the insulation where electrical contact is to be made with the drive lines. The desired results are obtained with this technique. The process entails the sequential steps of: 1. Cleaning the metallic ground plane in alcohol and acetone 2.

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Selective Deposition of Insulating Film in Magnetic Thin Film Storage Devices

The process selectively deposits insulating films in magnetic thin-film storage devices, which are required in order to separate conductive layers. But, in depositing such a film on the metallic ground plane which serves as the return path for the drive lines, as well as the physical support for the film, difficulties are encountered. Such are in maintaining the edges of the ground plane free from the insulation where electrical contact is to be made with the drive lines. The desired results are obtained with this technique. The process entails the sequential steps of: 1. Cleaning the metallic ground plane in alcohol and acetone
2. Heating the ground plane to a temperature of about 150 degrees C for about 15 minutes to remove solvents and to prevent blistering in the subsequent high temperature heat treatments that are to follow 3. Spinning Pyre-M. L.* polymeric film over the ground plane to a thickness between 1 to 10 microns; the polymeric film serves as the insulation 4. Baking the coated ground plane for 5 minutes at 150 degrees C 5. Coating the surface of the insulating film with KMER**, a photoresist 6. Baking the composite of insulating film and photoresist at 70 degrees C for 10 minutes 7. Exposing the photoresist to the desired pattern, 8. Developing the photoresist in KMER developer for 1 minute * Trademark of E. I. du Pont de Nemours & Company ** Trademark of Eastman Kodak Co...