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Magnetic Analog Digital Storage System

IP.com Disclosure Number: IPCOM000093705D
Original Publication Date: 1966-Jan-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Daughton, JM: AUTHOR

Abstract

Because of their sharply defined threshold properties, thin magnetic memory films are suitable for converting analog inputs to stored digital form.

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Magnetic Analog Digital Storage System

Because of their sharply defined threshold properties, thin magnetic memory films are suitable for converting analog inputs to stored digital form.

In the drawing, an analog input line is coupled to a series of thin magnetic films constituting a word storage group. The analog input current 1B has an initial magnitude proportional to a selected digital value from 1 to, say, 50. Bleeder resistors are connected at intervals to the analog input line throughout its length for progressively attenuating the analog current. These resistors can be of the thin film type so that they can be fabricated during the deposition process in which the magnetic films and conductive strips are formed.

The thin magnetic films in the arrangement have uniform thresholds and are arranged to be magnetized along their respective easy axes by the analog current. The initial magnitude of the analog current determines how many of the films are switched. Hence the stored analog quantity is represented by the number of films that are switched on that particular input line.

To read out the stored quantity the word read line is energized by a pulse of word current 1W which applies transverse fields to all of the films on this line. Significant output signals are furnished only by those films that previously are switched to a significant digit storing state by the analog input current. Translation of the digital output to binary form can be accomplished with...