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Producing Doped Silicon Dioxide Layers

IP.com Disclosure Number: IPCOM000093718D
Original Publication Date: 1966-Jan-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Hoffmeister, W: AUTHOR [+2]

Abstract

This method produces doped silicon dioxide layers to be used in the fabrication of semiconductor components as anti-erosion surface covering layers and simultaneously as the source material for impurity diffusion.

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Producing Doped Silicon Dioxide Layers

This method produces doped silicon dioxide layers to be used in the fabrication of semiconductor components as anti-erosion surface covering layers and simultaneously as the source material for impurity diffusion.

For the manufacture of gallium arsenide transistors, layers containing especially zinc and tin as doping substances are needed. They are produced by adding the appropriate alkylenes. Zinc diethyl and tin tetraethyl are miscible with silicon tetraethyl ester over a wide concentration range and do not react with one another at room temperature. The vapor pressures of the organo-metallic compounds of zinc and tin as well as of silicon tetraethyl ester do not differ noticeably. Thus, it is possible by adding the appropriate organo-metallic compounds pounds to the silicon tetraethyl ester to produce zinc or tin doped SiO(2) layers by pyrolytic decomposition. By varying the mixture ratio, it is possible to vary the doping concentration.

Where zinc diethyl is mixed with silicon tetraethyl ester, a solid zinc compound, e.g., zinc diethyl ester, can be precipitated due to a positive heat tone or the presence of moisture. As a result, the introduction of zinc into the pyrolytic SiO(2) layer can be prevented. Therefore, two recipients are used. One serves to store the zinc diethyl. The other stores the silicon tetraethyl ester. If now different nitrogen quantities are passed through both liquids, the desired mixture ratio of...