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Forming Thin Film Chain Memory Planes

IP.com Disclosure Number: IPCOM000093793D
Original Publication Date: 1966-Feb-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 59K

Publishing Venue

IBM

Related People

Young, WM: AUTHOR

Abstract

Memory chains 10 are first formed by etching a rough chain pattern from a solid copper sheet superimposed on insulator layer 11 bonded to the top surface of copper substrate 12. In its rough pattern, chain elements 13 are sharp cornered and lack an aperture 14.

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Forming Thin Film Chain Memory Planes

Memory chains 10 are first formed by etching a rough chain pattern from a solid copper sheet superimposed on insulator layer 11 bonded to the top surface of copper substrate 12. In its rough pattern, chain elements 13 are sharp cornered and lack an aperture 14.

The rough etched chain layer is then sandwiched by a second insulator layer 15 bonded to the under surface of superposed copper sheet 16. Access windows 17 are then formed through both outer copper layers 12 and 16 and insulator layers 11 and 15 by successive etching procedures. Chain element 13 in each window is finish-etched after application of photoresist and photographic exposure to suitable artwork and development.

Following the finish-etch of chain elements 13, outer copper layers 12 and 16 are then etched to form ground return conductors. Plane 20, following cleaning is then submerged in a bath and a Ni-Fe coat 17 is deposited such as by electroless methods, onto the cleaned copper of chain elements 13. Chain store plane 20 is now ready to be laced with suitable conductors to complete the plane assembly.

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