Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Slow Write Fast Read Memory

IP.com Disclosure Number: IPCOM000093794D
Original Publication Date: 1966-Feb-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Hohl, JH: AUTHOR

Abstract

The nondestructive readout memory arrangement combines square-loop magnetic cores for information storage with anisotropic thin magnetic film elements for sensing. A segment is cut off of each core. The stray field emerging at the point of reduced cross-section acts as a bias for the associated film element.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Slow Write Fast Read Memory

The nondestructive readout memory arrangement combines square-loop magnetic cores for information storage with anisotropic thin magnetic film elements for sensing. A segment is cut off of each core. The stray field emerging at the point of reduced cross-section acts as a bias for the associated film element.

Each core adjoins a film element and is separated from it only by flat read and sense lines. The sense lines are parallel to the core axis and the hard direction of the film and perpendicular to the read lines. Drive wires associated with the cores are selectively energized to set them to one of their stable magnetic states to store 1 or 0. The resulting stray field orients the magnetization of the film element in one of the easy directions.

To read out current is applied to the read line rotating the magnetization of the film element toward the hard axis. The polarity of the voltage thus induced in the sense line indicates whether a 1 or 0 is stored in the core. After the read current ceases the magnetization returns to its former position. The stored information remains unchanged. In this memory structure, isotropic films can also be used.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]