Browse Prior Art Database

Electrical Shock Wave Device

IP.com Disclosure Number: IPCOM000093812D
Original Publication Date: 1966-Feb-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Morgan, TN: AUTHOR

Abstract

This technique is for initiating a shock wave in an electrical shock wave device by injection of high-energy preheated carriers.

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Electrical Shock Wave Device

This technique is for initiating a shock wave in an electrical shock wave device by injection of high-energy preheated carriers.

As illustrated in A, an electrical shock wave device is formed in transistor-like fashion and comprises active region 1 along which shock waves are to be propagated and also emitter and base regions 3 and 5 defining an injection electrode 7. Voltage source V and load L are connected between metallic contacts 9 and 11 so that active region 1 is subjected to electric fields E of sufficient intensity to support but not initiate a shock wave. To initiate a shock wave a negative pulse is applied at contact 13 to forward bias junction 15. Thus high-energy carriers are injected by transistor action into active region 1 with sufficient energy to enter into a low mobility conduction band and initiate a shock wave.

As shown in B, an electrical shock wave device comprises active region 17 having alloy junction contact 23 and metallic contacts 19 and 21 between which voltage V and load L are connected. To initiate a shock wave, a negative pulse is applied at contact 23 sufficient to breakdown junction 25. Thus, high-energy carriers are injected into active region 17 to initiate a shock wave.

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