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Epitaxial Growth of High Resistivity GaAs

IP.com Disclosure Number: IPCOM000093815D
Original Publication Date: 1966-Mar-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Silvestri, VJ: AUTHOR [+3]

Abstract

This method is for epitaxially depositing high resistivity GaAs on GaAs substrates utilizing a disproportionation system.

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Epitaxial Growth of High Resistivity GaAs

This method is for epitaxially depositing high resistivity GaAs on GaAs substrates utilizing a disproportionation system.

In the process hydrogen iodide is passed over a GaAs source at a temperature of approximately 840 degrees C. The GaAs source is doped with iron to levels to approximately 1 x 10/19/. The doped GaAs is transported in the vapor phase to a deposition site where it is deposited from the vapor phase at a temperature of approximately 610 degrees C. The resulting layers are of a high resistivity GaAs. In this process the temperature of the source, 840 degrees C. and up is critical because iron in sufficient quantity to obtain high resisitivity material is not transported at lower temperatures.

The process is useful in masking isolation and passivation of semiconductor surfaces. One use is to isolate activated semiconductor devices in integrated circuit arrays. Because the material resulting from the process is a single crystal in nature, continuous epitaxial layers can be deposited.

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