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Nondestructive Readout Memory Cell

IP.com Disclosure Number: IPCOM000093970D
Original Publication Date: 1966-Apr-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Terman, LM: AUTHOR [+3]

Abstract

Two magnetic films are assembled into a nondestructive readout memory cell which responds to writing and reading fields applied along a single axis. The read film preferably has sufficient thickness so that its self-demagnetizing field exceeds its coercive force. The information in the storage film can be changed by coincident current writing techniques.

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Nondestructive Readout Memory Cell

Two magnetic films are assembled into a nondestructive readout memory cell which responds to writing and reading fields applied along a single axis. The read film preferably has sufficient thickness so that its self-demagnetizing field exceeds its coercive force. The information in the storage film can be changed by coincident current writing techniques.

The storage film and read film are magnetostatically coupled. The read film is magnetically biased by the external field of the storage film. The two films respectively have easy axes which are angularly separated from each other by an angle omega. In this arrangement the external bias field required of the storage film can be adjusted by changing omega. For illustrative purposes, omega is assumed to be 45 degrees.

The writing of 1 or 0 is accomplished by the coincidental application of word and digit fields to the cell along the easy axis of the storage film. When the storage film is magnetized in its 0 direction, the external field of the storage film biases the magnetization vector of the read film rotatively through an angle omega away from its easy axis, causing the two films to have antiparallel magnetizations. The read field is applied in the same direction as the 0 vector of the read film, so that no sense signal is induced when the cell is storing 0.

When the storage film is magnetized to represent 1, the external field of the storage film biases the magnetization vecto...