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Coupled Film Memory Device with Improved Write Disturb Properties

IP.com Disclosure Number: IPCOM000093977D
Original Publication Date: 1966-Apr-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 78K

Publishing Venue

IBM

Related People

Daughton, JM: AUTHOR [+2]

Abstract

This type of closed-easy-axis (CEA) magnetic film memory device is far less susceptible to unwanted disturbances by bit fields than are the other types of CEA devices. In such other types, the coupled films are either separated at all points by the full thickness of the conducting strip line or are joined at their edges in exchange-coupled relationship. The manner of fabricating this memory device is indicated in the upper drawing. A first magnetic layer is deposited as a continuous flat sheet upon the insulated substrate surface. A continuous sheet of nonmagnetic material, the interrupt-exchange-coupling layer, then is deposited upon the first magnetic layer. This nonmagnetic material can be either an insulator, e.g., silicon monoxide, or a metal such as copper, the latter being preferred. The conducting strip lines, i.e.

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Coupled Film Memory Device with Improved Write Disturb Properties

This type of closed-easy-axis (CEA) magnetic film memory device is far less susceptible to unwanted disturbances by bit fields than are the other types of CEA devices. In such other types, the coupled films are either separated at all points by the full thickness of the conducting strip line or are joined at their edges in exchange-coupled relationship. The manner of fabricating this memory device is indicated in the upper drawing. A first magnetic layer is deposited as a continuous flat sheet upon the insulated substrate surface. A continuous sheet of nonmagnetic material, the interrupt-exchange-coupling layer, then is deposited upon the first magnetic layer. This nonmagnetic material can be either an insulator, e.g., silicon monoxide, or a metal such as copper, the latter being preferred. The conducting strip lines, i.e., bit-sense lines, are deposited upon the interrupt-exchange-coupling layer. This can be done by electrode position if the base layer is metallic.

The second magnetic layer is then deposited by electrolysis or otherwise over the strip lines and upon the intervening areas of the nonmagnetic layer. To complete the coupled film structure, a portion of the layered material between each adjacent pair of strip lines is removed down to the insulation on the substrate surface. If all of these layers are metallic, this removal can be done by a photoetching technique.

The finished CEA struc...