Browse Prior Art Database

Wire Memory

IP.com Disclosure Number: IPCOM000093982D
Original Publication Date: 1966-Apr-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Gutwin, OA: AUTHOR [+2]

Abstract

This thin-film storage device that is constructed to have the bit conductors 2 and the word conductors 3 very close to the ground plane 4.

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Wire Memory

This thin-film storage device that is constructed to have the bit conductors 2 and the word conductors 3 very close to the ground plane 4.

Plane 4 is formed with parallel grooves 5 that are deep enough to partially receive the bit conductors 2. A suitable layer of dielectric material 6 is formed over the grooved surface of the ground plane to insulate conductors 2 and 3 from ground. At the intersections of the bit and word lines, the bit lines are plated with a thin magnetic film. The bit and word lines are conventionally energized to magnetize the film for read and write operations.

The word lines 3 are suitably located over the bit lines close to plane 4. For example, the word conductors can be formed on a flexible dielectric strip that is mechanically held against the bit lines and the insulation layer 6.

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