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Semiconductor Diode

IP.com Disclosure Number: IPCOM000094001D
Original Publication Date: 1966-Apr-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

Fiegel, FR: AUTHOR [+3]

Abstract

Semiconductor diodes of the type shown are not only electroluminescent but also exhibit a negative resistance characteristic. The diode is formed of GaAs and includes a first layer 1 which is P-type, a second layer 2 which is only slightly P-type and has a high resistivity, and a third layer 3 which is N-type. Light emission and negative resistance characteristics are produced by applying a forward bias to the diode. These characteristics depend upon surface conditions and can be either changed or stabilized or both by etching the surface of the device or by passing a DC current through the diode for an extended period of time. For example, by passing a current of 100 milliamps in a forward direction through the diode, the threshold V1 at which negative resistance occurs is raised.

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Semiconductor Diode

Semiconductor diodes of the type shown are not only electroluminescent but also exhibit a negative resistance characteristic. The diode is formed of GaAs and includes a first layer 1 which is P-type, a second layer 2 which is only slightly P-type and has a high resistivity, and a third layer 3 which is N-type. Light emission and negative resistance characteristics are produced by applying a forward bias to the diode. These characteristics depend upon surface conditions and can be either changed or stabilized or both by etching the surface of the device or by passing a DC current through the diode for an extended period of time. For example, by passing a current of 100 milliamps in a forward direction through the diode, the threshold V1 at which negative resistance occurs is raised. This change in the threshold voltage, however, is completed and the value stabilizes after a few hours of application. It is believed that the application of the current produces a heating effect that accelerates oxidation at the surface of the diode to produce either the change or stabilization or both of its characteristics.

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