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Electron Beam Excited Laser

IP.com Disclosure Number: IPCOM000094003D
Original Publication Date: 1966-Apr-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 19K

Publishing Venue

IBM

Related People

Stern, F: AUTHOR

Abstract

The semiconductor body in which lasing is produced in response to an applied electron beam is a three-layer structure. The different layers have different indexes of refraction to both confine the lasing emission to active layer 2 in which recombination takes place and to allow lasing to be obtained at a lower pumping threshold. Active layer 2 has a higher index of refraction than either of outer layers 1 or 3 at the wavelengths of the emitted light.

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Electron Beam Excited Laser

The semiconductor body in which lasing is produced in response to an applied electron beam is a three-layer structure. The different layers have different indexes of refraction to both confine the lasing emission to active layer 2 in which recombination takes place and to allow lasing to be obtained at a lower pumping threshold. Active layer 2 has a higher index of refraction than either of outer layers 1 or 3 at the wavelengths of the emitted light.

The thickness of upper layer 1 through which the electron beam pumping energy is applied is such as to cause the bulk of the ionization caused by the electron beam to be produced in active layer 2. The structure is formed of GaAs with layer 2 being a partially compensated layer about two microns thick. Layer 1 is a heavily doped P-type layer about five microns thick and layer 3 is an N-type layer.

For materials with energy gaps in the visible portion of the spectrum, in which impurity effects on the index of refraction are small, the desired confinement of the emitted light can be obtained by forming the layers out of different semiconductor materials or alloys. Threshold optimization is obtained in each type of structure by varying the electron beam energy to obtain the penetration depth best suited to the particular structure.

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