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Light Emitting GaAs Diode

IP.com Disclosure Number: IPCOM000094007D
Original Publication Date: 1966-Apr-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

Michelitsch, M: AUTHOR

Abstract

A forwardly biased GaAs diode emits infrared light, lambda = 9, 000 Angstroms at room temperature, adjacent to its PN junction due to the recombination of carriers. The external light output decreases more and more with the lapse of time to a degree depending on the current density and on the medium surrounding the PN junction. Where it is covered with an antireflection coating of selenium, the half-life period is approximately only 100 hours.

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Light Emitting GaAs Diode

A forwardly biased GaAs diode emits infrared light, lambda = 9, 000 Angstroms at room temperature, adjacent to its PN junction due to the recombination of carriers. The external light output decreases more and more with the lapse of time to a degree depending on the current density and on the medium surrounding the PN junction.

Where it is covered with an antireflection coating of selenium, the half-life period is approximately only 100 hours.

A high stability with a practically constant light output over a very long period in the presence of a high current load is achieved by coating the diode. Such coating is primarily in the area surrounding the PN junction. A silicon dioxide layer having a thickness of approximately 3,000 Angstroms is applied.

The diode in A is mesa-shaped and that in B is a planar structure. They consist of a chip-shaped body of N-conducting GaAs to the bottom of which is fixed an Au layer. Diffused into the upper region of the body is a P-conducting zone having an Au electrode doped with Mg alloyed into it. Adjacent to the region where the light-emitting PN junction comes to the surface, the GaAs body is coated with an evaporated or pyrolytically deposited SiO(2) layer. This has a thickness of approximately 3,000 Angstroms.

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