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Adding Gold to Epitaxially Grown Semiconductor Regions

IP.com Disclosure Number: IPCOM000094013D
Original Publication Date: 1966-Apr-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Patzner, EJ: AUTHOR

Abstract

This is a method for introducing gold, for its carrier lifetime killing properties, into epitaxially grown semiconductor regions.

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Adding Gold to Epitaxially Grown Semiconductor Regions

This is a method for introducing gold, for its carrier lifetime killing properties, into epitaxially grown semiconductor regions.

HAuCl(4) . 3H(2)O is dissolved in HNO(3) and the resulting solution is added to SiCl(4). The gold compound is maintained in this solution despite the fact that none of the gold halides are directly soluble in SiCl(4). Hence, the gold chloride- nitric acid-silicon tetrachloride solution, thus formed, is used as a dopant. Such is directly added to an epitaxial deposition system such as by adding the solution to the bubbler usually used for epitaxial deposition in such a system. Alternatively, the solution can be placed in a separate bubbler with the vapor from it being separately fed into the epitaxial reaction chamber. Consequently, the gold halide is reduced in the epitaxial chamber along with the silicon tetrachloride. The result is that the gold is incorporated in the epitaxial layer to provide carrier lifetime killing properties therefor.

One advantage of this method is that gold is incorporated uniformly during the epitaxial crystal growing process without the necessity of a separate gold diffusion step as done previously. In addition, since none of the gold halides are directly soluble in silicon tetrachloride, this method permits maintaining a gold halide in a solution containing silicon tetrachloride. Furthermore, a maximum amount of gold can be incorporated in the silicon l...