Browse Prior Art Database

Forming an Electrical Contact to a Semiconductor Body

IP.com Disclosure Number: IPCOM000094017D
Original Publication Date: 1966-Apr-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 47K

Publishing Venue

IBM

Related People

Pecoraro, RP: AUTHOR [+3]

Abstract

This forms an electrical contact to a semiconductor body. Such body ultimately uses an external annular metal contact region as a mask for etching away the exposed portions of a masking metal layer. The latter previously used for forming an opening in the dielectric encapsulation layer located on the semiconductor body.

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Forming an Electrical Contact to a Semiconductor Body

This forms an electrical contact to a semiconductor body. Such body ultimately uses an external annular metal contact region as a mask for etching away the exposed portions of a masking metal layer. The latter previously used for forming an opening in the dielectric encapsulation layer located on the semiconductor body.

In drawing A, a suitable dielectric encapsulation layer is formed on the surface of a semiconductor body preferably of silicon. The encapsulation layer is preferably a composite layer of silicon dioxide and an overcoat layer of glass. Subsequently, a layer of metal which adheres well to the surface of the glass layer is deposited or evaporated onto the surface of the glass layer to serve as a metal masking layer. For example, a layer of chromium can be used as the masking metal layer. A layer of photoresist is then deposited on the metal masking layer and a photolithographic masked pattern is formed on the surface of the photoresist layer to permit subsequent removal of the desired areas of photoresist material thereby leaving the underlying portion of the metal layer exposed. In the example of drawing A, only a single opening is shown. A suitable metal etching solution such as potassium ferrocyanide is then used to etch away the portion of the metal layer located beneath the opening in the photoresist layer with the surface photoresist layer acting as a mask to protect the remaining metal laye...