Browse Prior Art Database

Metal Contacts for Semiconductor Structures

IP.com Disclosure Number: IPCOM000094019D
Original Publication Date: 1966-Apr-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bilous, O: AUTHOR [+4]

Abstract

This technique for making electrical, metal contact to a semiconductor device. After aluminum deposition on the desired surface portions of a semiconductor device, copper is deposited on the aluminum layer. By a subsequent heating operation at a temperature of about 300 degrees C or higher, an aluminum bronze structure is formed which adheres well to glass and SiO(2) encapsulation layers.

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Metal Contacts for Semiconductor Structures

This technique for making electrical, metal contact to a semiconductor device. After aluminum deposition on the desired surface portions of a semiconductor device, copper is deposited on the aluminum layer. By a subsequent heating operation at a temperature of about 300 degrees C or higher, an aluminum bronze structure is formed which adheres well to glass and SiO(2) encapsulation layers.

With this type of metal contact structure there is no mechanical interface, present in other metal contact structures using a plurality of separate metal layers. The interface existing with the use of other separate metal contact layers results in a metallurgically complex structure having anomalous voltage drops.

Hence, the Cu-Al metal contact structure provides a more reliable metal contact method especially useful for integrated silicon structures. The layers can also be deposited in reverse order if desired. For integrated structures, aluminum contact plugs can be bonded to copper substrates or lands thus eliminating a soldering operation.

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