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Electrographic Developer for an Electrostatic Storage Display Tube

IP.com Disclosure Number: IPCOM000094049D
Original Publication Date: 1966-May-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Engel, JM: AUTHOR

Abstract

An electrostatic storage display tube ESDT is shown. In this the development of the latent image written on a dielectric target 10 is accomplished. Such is by cascading an electrographic developer 12 over the opposite side of the dielectric screen.

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Electrographic Developer for an Electrostatic Storage Display Tube

An electrostatic storage display tube ESDT is shown. In this the development of the latent image written on a dielectric target 10 is accomplished. Such is by cascading an electrographic developer 12 over the opposite side of the dielectric screen.

The developer characteristics for the ESDT require a material which is triboelectrically compatible with the dielectric target material and other materials in the developer chamber, which has a low vapor pressure and which has a melting point high enough to withstand the bakeout temperatures. These are incurred during the manufacture of the tube.

A developer made from inorganic materials which possesses the required high melting point and low vapor pressure in addition to being triboelectrically compatible with the dielectric target material is that group comprising the group II-VI semiconductors which have a large band gap. One such suitable material is a mixture of zinc sulfide and cadmium sulfide which has been found to give the required results when used in the ESDT.

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