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Storage Pattern for Bulk Memories

IP.com Disclosure Number: IPCOM000094091D
Original Publication Date: 1966-May-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 53K

Publishing Venue

IBM

Related People

Schmeckenbecher, AF: AUTHOR

Abstract

A wire net type of pattern is provided for a magnetic storage array which a closed magnetic flux path is furnished around the bit in the easy direction and to some extent around the bit in the hard direction.

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Storage Pattern for Bulk Memories

A wire net type of pattern is provided for a magnetic storage array which a closed magnetic flux path is furnished around the bit in the easy direction and to some extent around the bit in the hard direction.

That pattern 10, shown in drawing A, includes a plurality of parallel bit lines 2 in spaced relationship one to the other. Superimposed over lines 2 are word lines
4. The latter are interrupted between bits by curved line sections 6 and 8. These are arranged on alternate sides of the line 4. Lines 2 can be positioned to cross lines 4 at the center of bits, top two bit lines in A, or at either end of the bits, bottom bit line in A. Interaction between bits 5 along lines 4 and sensitivity to longitudinal fields is minimized by sections 6 and 8 between bits.

Drawing D is an exploded view about a bit 5. Drawings B and C depict sections BB and CC of drawing A respectively. The nature of the closed flux path is better illustrated in these latter drawings. There it is indicated that the bit includes bit line 12 with word line 14 superimposed thereover. Surrounding and encasing the bit site is magnetic coating 16 providing a closed flux path around the site. Insulation 18 separates the conductive members one from the other.

To form such an array, a laminate composed of two metal sheets separated by a plastic or other insulating layer is taken and photoetched. One sheet is etched to form the word line pattern and the other the bit li...