Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Rectangular Vapor Growth Reactor

IP.com Disclosure Number: IPCOM000094105D
Original Publication Date: 1966-May-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Doo, VY: AUTHOR [+4]

Abstract

The rectangular vapor-growth chamber 1 substantially improves the vapor-growth film uniformity over previously used circular vapor-growth chambers. Horizontal susceptor 2, having a plurality of bores 3 along its length for holding semiconductor wafers, is substantially the width of the rectangular reaction chamber. The improvement in vapor-growth layer uniformity is attributed to the uniform cross-sectional space above the semiconductor wafers, the fact that virtually all the reacting gas passes over the susceptor in chamber 1, and the flat bottom of chamber 1 prevents the system operator from allowing the susceptor 2 to tilt sidewise in the chamber, thus altering the vapor-growth layer uniformity.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Rectangular Vapor Growth Reactor

The rectangular vapor-growth chamber 1 substantially improves the vapor- growth film uniformity over previously used circular vapor-growth chambers. Horizontal susceptor 2, having a plurality of bores 3 along its length for holding semiconductor wafers, is substantially the width of the rectangular reaction chamber. The improvement in vapor-growth layer uniformity is attributed to the uniform cross-sectional space above the semiconductor wafers, the fact that virtually all the reacting gas passes over the susceptor in chamber 1, and the flat bottom of chamber 1 prevents the system operator from allowing the susceptor 2 to tilt sidewise in the chamber, thus altering the vapor-growth layer uniformity.

1

Page 2 of 2

2

[This page contains 1 picture or other non-text object]