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Etch for Removing Gallium From Gallium Phosphide

IP.com Disclosure Number: IPCOM000094118D
Original Publication Date: 1966-Jun-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Wagner, PR: AUTHOR

Abstract

Ga is employed as a solvent for GaP for crystal growth and in the formation of epitaxially overgrown junctions. In the course of these processes, the GaP crystals are wetted by Ga which must ultimately be removed. Some can be removed mechanically, but chemical treatment is required to completely eliminate adhering Ga. A chemical etch consisting of hot HCl solution is normally used. Although this etch is effective, it is relatively slow, and the last traces of metallic Ga are removed with difficulty. An etch, particularly rapid and effective for removing metallic Ga from GaP, is one consisting of 4 parts concentrated HCl:3 parts 30% H(2)0(2) by volume. Since this solution is by itself unstable, the following procedure has been adopted. Four parts by volume of conc.

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Etch for Removing Gallium From Gallium Phosphide

Ga is employed as a solvent for GaP for crystal growth and in the formation of epitaxially overgrown junctions. In the course of these processes, the GaP crystals are wetted by Ga which must ultimately be removed. Some can be removed mechanically, but chemical treatment is required to completely eliminate adhering Ga. A chemical etch consisting of hot HCl solution is normally used. Although this etch is effective, it is relatively slow, and the last traces of metallic Ga are removed with difficulty. An etch, particularly rapid and effective for removing metallic Ga from GaP, is one consisting of 4 parts concentrated HCl:3 parts 30% H(2)0(2) by volume. Since this solution is by itself unstable, the following procedure has been adopted. Four parts by volume of conc. HCl is poured into the container holding the material to be treated. After a few seconds, a mild reaction occurs between the Ga and HCl. Once this initial reaction is underway, the H(2)0(2) is quickly added. The reaction rate is considerably enhanced, and the Ga removal is generally complete within a few minutes.

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