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Improving Adhesion of Photoresists to Phosphorus Doped SiO(2)

IP.com Disclosure Number: IPCOM000094119D
Original Publication Date: 1966-Jun-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Krongelb, S: AUTHOR

Abstract

This method improves photoresist adhesion to phosphorus-doped silicon dioxide. A substrate is coated with a deposition of phosphorus-doped SiO(2) from separate sources of these materials. The phosphorus source is then turned off and a thin layer of undoped SiO(2) is deposited on top of the phosphorus-doped material. A photoresist can then be applied to the undoped SiO(2) and the adhesion of the resist is enhanced compared to that obtainable on phosphorus-doped SiO(2). Since the undoped SiO(2) etches at a much slower rate than the phosphorus-doped material, undercutting is no more severe than if only the phosphorus-doped material were present.

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Improving Adhesion of Photoresists to Phosphorus Doped SiO(2)

This method improves photoresist adhesion to phosphorus-doped silicon dioxide. A substrate is coated with a deposition of phosphorus-doped SiO(2) from separate sources of these materials. The phosphorus source is then turned off and a thin layer of undoped SiO(2) is deposited on top of the phosphorus- doped material. A photoresist can then be applied to the undoped SiO(2) and the adhesion of the resist is enhanced compared to that obtainable on phosphorus-doped SiO(2). Since the undoped SiO(2) etches at a much slower rate than the phosphorus-doped material, undercutting is no more severe than if only the phosphorus-doped material were present.

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