Browse Prior Art Database

Electroluminescent Device

IP.com Disclosure Number: IPCOM000094174D
Original Publication Date: 1966-Jun-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 43K

Publishing Venue

IBM

Related People

Fiegel, FR: AUTHOR [+3]

Abstract

The electroluminescent device of A is formed of a crystal of GaAs originally doped with manganese which is a P-type impurity. Through one surface of the crystal zinc, another P-type impurity, is diffused to form the structure shown. An insulating region 1 is formed between the zinc-doped region and the manganese-doped region The application of current to terminal 10 of this diode produces the current characteristic shown. Avalanching is produced in region I providing an electroluminescent output at a threshold voltage which is dependent upon the polarity of the applied input.

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Electroluminescent Device

The electroluminescent device of A is formed of a crystal of GaAs originally doped with manganese which is a P-type impurity. Through one surface of the crystal zinc, another P-type impurity, is diffused to form the structure shown. An insulating region 1 is formed between the zinc-doped region and the manganese- doped region The application of current to terminal 10 of this diode produces the current characteristic shown. Avalanching is produced in region I providing an electroluminescent output at a threshold voltage which is dependent upon the polarity of the applied input.

The device of B is similar to that of A differing in that it is double-ended. Zinc is diffused into both surfaces to produce two insulating regions I1 and I2. In these, avalanching can be produced though the threshold voltage at which an electroluminescent output is provided is essentially the same for either polarity input. The polarity of the input determines the location in the material at which the electroluminescence is produced. If the applied input is negative, region I1 avalanches first and the electroluminescence is produced in the zinc region adjacent to region 12. Conversely, if the applied input at terminal 10 is positive, region 12 avalanches and electroluminescence is produced in the zinc region adjacent to region 11. In the structure of B the spacing between regions I1 and I2 is relatively small, less than 50 microns. The threshold voltage is higher...