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Fabrication of Monolithic Integrated Circuit Structure by a Semiconductor Etching Technique

IP.com Disclosure Number: IPCOM000094177D
Original Publication Date: 1966-Jun-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 56K

Publishing Venue

IBM

Related People

Ames, I: AUTHOR [+4]

Abstract

This method forms an insulated-gate field effect transistor in which the length of the conduction channel is defined photolithographically. In A, P-type wafer 1 includes thin N-type layer 3. A chemical mask 5, e.g., silicon dioxide, is formed over portions of layer 3 intended to define source and drain electrodes 7 and 9. In B, exposed portions of layer 3 are etched and mask 5 is removed. In C, silicon dioxide layer 11 is genetically formed over the etched structure and access windows 13 and 15 to source and drain electrodes 7 and 9, respectively, are photolithographically defined. Metalizations 17 and 19 to source and drain electrodes 7 and 9, respectively, and gate electrode 21 are formed by conventional metalization techniques.

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Fabrication of Monolithic Integrated Circuit Structure by a Semiconductor Etching Technique

This method forms an insulated-gate field effect transistor in which the length of the conduction channel is defined photolithographically. In A, P-type wafer 1 includes thin N-type layer 3. A chemical mask 5, e.g., silicon dioxide, is formed over portions of layer 3 intended to define source and drain electrodes 7 and 9. In B, exposed portions of layer 3 are etched and mask 5 is removed. In C, silicon dioxide layer 11 is genetically formed over the etched structure and access windows 13 and 15 to source and drain electrodes 7 and 9, respectively, are photolithographically defined. Metalizations 17 and 19 to source and drain electrodes 7 and 9, respectively, and gate electrode 21 are formed by conventional metalization techniques. The dimensions of conduction channel 23 between source and drain electrodes 7 and 9 are precisely defined by controlling the dimensions of mask 5 and the duration of the etching process in B.

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