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Producing Silicon Carbide

IP.com Disclosure Number: IPCOM000094182D
Original Publication Date: 1966-Jul-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Plasket, TS: AUTHOR [+2]

Abstract

This method is for growing silicon carbide monocrystals from a solution containing silicon carbide. In this method, molten solvent solution 2, which dissolves silicon carbide, floats on polycrystalline silicon carbide pedestal 4. Silicon carbide seed 6 is inserted into solution 2 and is pulled and rotated from solution 2 at any desired rate. Solution 2 is heated by a single turn RF induction coil 8. The temperature of the solution determines the concentration of the silicon carbide in the solvent. The pedestal or coil is mounted so as to move vertically. Thus heat is permitted to be applied to other portions of the silicon carbide pedestal as the latter is consumed.

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Producing Silicon Carbide

This method is for growing silicon carbide monocrystals from a solution containing silicon carbide. In this method, molten solvent solution 2, which dissolves silicon carbide, floats on polycrystalline silicon carbide pedestal 4. Silicon carbide seed 6 is inserted into solution 2 and is pulled and rotated from solution 2 at any desired rate. Solution 2 is heated by a single turn RF induction coil 8. The temperature of the solution determines the concentration of the silicon carbide in the solvent. The pedestal or coil is mounted so as to move vertically. Thus heat is permitted to be applied to other portions of the silicon carbide pedestal as the latter is consumed.

Housing 12 in which the silicon carbide monocrystals are grown is made of quartz. TEFLON* bushing 14 and O-ring 16 provide a seal for growth either in a vacuum or in an inert atmosphere. Seed holder 18 is rotatable and movable vertically and the pedestal, which is fastened to the quartz housing 12, can be rotated to stir the melt and to provide a uniform heating to the solution.

By using this method, the likelihood of contamination is reduced. This is because there is no crucible and the temperature of growth is much lower than if growth occurred at the melting point. This method would purify since impurities from the polycrystalline silicon carbide would be diluted by the solvent.

Because growth occurs at a temperature lower than the melting point of the material, the proces...