Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Trimming of Thin Film Resistors

IP.com Disclosure Number: IPCOM000094194D
Original Publication Date: 1966-Jul-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 43K

Publishing Venue

IBM

Related People

Davidse, PD: AUTHOR [+2]

Abstract

This process is used for adjusting the resistance values of thin-film resistors by reducing the cross-sectional area of the resistors by reverse sputtering.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 89% of the total text.

Page 1 of 2

Trimming of Thin Film Resistors

This process is used for adjusting the resistance values of thin-film resistors by reducing the cross-sectional area of the resistors by reverse sputtering.

In modern microminiaturized electronic components resistor elements are normally printed, or a thin layer of material applied and excess material etched away. Usually the resistances of such resistors must be individually adjusted to predetermined values. This technique permits the simultaneous adjustment of many resistors to their predetermined value.

In this process the adjustment of the resistors is accomplished by eroding the resistors by reverse sputtering. Apparatus 10 for accomplishing the erosion consists of bell jar 12 mounted on base 14.

There are enclosed a cathode 16, an anode 18, and a shutter 20 which is movably mounted on shaft 22. Two ports 24 and 26 are provided in base 14. Port 24 is joined to conduit 24a through which gaseous material, such as argon or its ionized particle is injected. Port 26 is joined to conduit 26a which, in turn, is connected to vacuum pump 26b.

In operation, substrate 30 having one or more thin-film resistors 32 is mounted on cathode 16 and an AC of the order of 1000 volts applied across cathode 16 and anode 18. Shutter 20 can be rotated between anode 18 and cathode 16 to obtain more precise sputtering intervals. If desired, suitable electrical terminals can be connected to the resistors to enable monitoring during the sputtering phase....